IRF734PBF
MOSFET N-CH 450V 4.9A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF734PBF is an N-Channel Power MOSFET featuring a 450 V drain-source voltage (Vdss) and continuous drain current of 4.9 A at 25°C. This through-hole component, packaged in a TO-220AB, offers a maximum power dissipation of 74 W (Tc) and a low on-resistance (Rds On) of 1.2 Ohm at 2.9 A and 10 V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 45 nC at 10 V and input capacitance (Ciss) of 680 pF at 25 V. The device supports a gate-source voltage range of ±20 V and has a threshold voltage (Vgs(th)) of 4 V at 250 µA. This MOSFET is suitable for applications in industrial power control and switching power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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