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IRF730STRL

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IRF730STRL

MOSFET N-CH 400V 5.5A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF730STRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 400V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 5.5A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 1 Ohm at 3.3A and 10V gate drive. Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 700 pF at 25V. The IRF730STRL is housed in a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management with a power dissipation of 74W at 25°C (Tc) and 3.1W at 25°C (Ta). Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in power supply units, motor control, and lighting applications within industrial and consumer electronics sectors. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Rds On (Max) @ Id, Vgs1Ohm @ 3.3A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 25 V

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