IRF730STRL
MOSFET N-CH 400V 5.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF730STRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 400V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 5.5A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 1 Ohm at 3.3A and 10V gate drive. Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 700 pF at 25V.
The IRF730STRL is housed in a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management with a power dissipation of 74W at 25°C (Tc) and 3.1W at 25°C (Ta). Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in power supply units, motor control, and lighting applications within industrial and consumer electronics sectors. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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