IRF730BPBF
MOSFET N-CH 400V 6A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRF730BPBF is an N-Channel Power MOSFET designed for high voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 6A at 25°C, this component offers a maximum power dissipation of 104W (Tc). The Rds(On) is specified at 1 Ohm maximum for a 3A drain current and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 18 nC maximum at 10V and input capacitance (Ciss) of 311 pF maximum at 100V. With a ±30V maximum gate-source voltage and a threshold voltage (Vgs(th)) of 5V at 250µA, the IRF730BPBF is suitable for applications requiring robust switching performance. This device is housed in a TO-220AB through-hole package and operates across a temperature range of -55°C to 150°C. Commonly utilized in industrial power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 311 pF @ 100 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
