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IRF730BPBF

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IRF730BPBF

MOSFET N-CH 400V 6A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF730BPBF is an N-Channel Power MOSFET designed for high voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 6A at 25°C, this component offers a maximum power dissipation of 104W (Tc). The Rds(On) is specified at 1 Ohm maximum for a 3A drain current and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 18 nC maximum at 10V and input capacitance (Ciss) of 311 pF maximum at 100V. With a ±30V maximum gate-source voltage and a threshold voltage (Vgs(th)) of 5V at 250µA, the IRF730BPBF is suitable for applications requiring robust switching performance. This device is housed in a TO-220AB through-hole package and operates across a temperature range of -55°C to 150°C. Commonly utilized in industrial power supplies, lighting, and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs1Ohm @ 3A, 10V
FET Feature-
Power Dissipation (Max)104W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds311 pF @ 100 V

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