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IRF730ASTRL

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IRF730ASTRL

MOSFET N-CH 400V 5.5A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRF730ASTRL is an N-Channel Power MOSFET designed for demanding applications. This component features a 400V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 5.5A at 25°C (Tc), with a maximum power dissipation of 74W (Tc). The device offers a low on-resistance of 1Ohm maximum at 3.3A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 22 nC maximum at 10V and an input capacitance (Ciss) of 600 pF maximum at 25V. The IRF730ASTRL is housed in a TO-263 (D2PAK) package for surface mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, motor control, and general switching applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Rds On (Max) @ Id, Vgs1Ohm @ 3.3A, 10V
FET Feature-
Power Dissipation (Max)74W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V

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