IRF730AS
MOSFET N-CH 400V 5.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix IRF730AS is an N-Channel Power MOSFET designed for high-voltage applications. Featuring a Drain-Source Voltage (Vdss) of 400 V and a continuous Drain Current (Id) of 5.5 A at 25°C, this device is suitable for power switching and control circuits. The Rds On is specified at 1 Ohm maximum at 3.3 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 22 nC maximum at 10 V and an Input Capacitance (Ciss) of 600 pF maximum at 25 V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 74 W (Tc). Packaged in a TO-263 (D2PAK) surface-mount configuration, this component is commonly utilized in industrial and consumer electronics power supplies.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
Request a Quote
Clients Also Buy
IRFIBC30G
MOSFET N-CH 600V 2.5A TO220-3
IRF820APBF-BE3
MOSFET N-CH 500V 2.5A TO220AB
SQD50P06-15L_T4GE3
P-CHANNEL 60-V (D-S) 175C MOSFET
