IRF730ALPBF
MOSFET N-CH 400V 5.5A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel MOSFET, part number IRF730ALPBF, features a 400V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.5A at 25°C (Tc). This device offers a maximum on-resistance (Rds On) of 1 Ohm at 3.3A and 10V Vgs, with a gate charge (Qg) of 22 nC maximum at 10V. The input capacitance (Ciss) is rated at 600 pF maximum at 25V. Designed for through-hole mounting, it is packaged in an I2PAK (TO-262-3 Long Leads, TO-262AA) and supports a maximum power dissipation of 74W (Tc). Operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in power supply applications and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
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