IRF730A
MOSFET N-CH 400V 5.5A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF730A, an N-Channel Power MOSFET, offers a Vdss of 400 V and a continuous drain current (Id) of 5.5A at 25°C. This through-hole component, housed in a TO-220AB package, features a maximum Rds On of 1 Ohm at 3.3A, 10V. Key electrical characteristics include a gate charge (Qg) of 22 nC at 10V and input capacitance (Ciss) of 600 pF at 25V. The device supports a maximum power dissipation of 74W (Tc) and operates within a temperature range of -55°C to 150°C. It is suitable for applications in industrial and power supply sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
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