IRF720S
MOSFET N-CH 400V 3.3A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF720S is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 3.3A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 1.8 Ohms at 2A, 10V, with a Gate-Source Voltage (Vgs) tolerance of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include a gate charge (Qg) of 20 nC at 10V and an input capacitance (Ciss) of 410 pF at 25V. With a maximum power dissipation of 3.1W (Ta) and 50W (Tc), it is housed in a TO-263 (D2PAK) surface-mount package. This MOSFET is suitable for use in industrial, automotive, and power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
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