IRF720L
MOSFET N-CH 400V 3.3A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF720L is an N-Channel Power MOSFET designed for robust performance in demanding applications. This component features a 400V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 3.3A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.8 Ohm at 2A and 10V gate-source voltage (Vgs), it offers efficient switching characteristics. The device is housed in an I2PAK package with long leads, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 20 nC at 10V and an input capacitance (Ciss) of 410 pF at 25V. Power dissipation is rated at 3.1W (Ta) and 50W (Tc). This MOSFET is utilized in industrial, power supply, and motor control applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
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