IRF710S
MOSFET N-CH 400V 2A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF710S is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a 400V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 2A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 3.6 Ohms at 1.2A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 17 nC (typical) at 10V Vgs and input capacitance (Ciss) of 170 pF (maximum) at 25V Vds, it is suitable for efficient power conversion. The IRF710S is available in a TO-263 (D2PAK) surface-mount package, facilitating integration into compact board designs. It operates across a wide temperature range of -55°C to 150°C. This MOSFET finds application in power supplies, lighting, and motor control circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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