IRF710L
MOSFET N-CH 400V 2A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF710L is an N-Channel power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 400 V and a continuous Drain Current (Id) of 2 A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 3.6 Ohms at 1.2 A and 10 Vgs, it offers efficient switching performance. The Gate Charge (Qg) is 17 nC maximum at 10 Vgs, and the Input Capacitance (Ciss) is 170 pF maximum at 25 Vds. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in an I2PAK (TO-262-3 Long Leads) for through-hole mounting, the IRF710L is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |