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IRF644STRL

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IRF644STRL

MOSFET N-CH 250V 14A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF644STRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 14 A at 25°C (Tc). The Rds(On) is specified at a maximum of 280 mOhm at 8.4 A and 10 V gate drive. With a Gate Charge (Qg) of 68 nC (max) at 10 V and an Input Capacitance (Ciss) of 1300 pF (max) at 25 V, precise control is facilitated. The IRF644STRL offers a power dissipation capability of 3.1 W (Ta) and 125 W (Tc). It is housed in a TO-263 (D2PAK) surface mount package, suitable for automated assembly. The operating temperature range is from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supplies, motor control, and general-purpose switching circuits across various industrial and telecommunications sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 8.4A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V

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