IRF644NSTRR
MOSFET N-CH 250V 14A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRF644NSTRR is a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 14A at 25°C. The Rds(On) is specified at a maximum of 240mOhm at 8.4A and 10V gate drive, with a typical gate charge (Qg) of 54 nC at 10V. The device offers a maximum power dissipation of 150W (Tc) and is packaged in a TO-263-3, D2PAK surface-mount package, supplied on tape and reel. Operating temperature range is -55°C to 175°C (TJ). This MOSFET finds application in power supply units, motor control, and lighting systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
