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IRF644NPBF

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IRF644NPBF

MOSFET N-CH 250V 14A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF644NPBF is an N-Channel Power MOSFET designed for robust performance. This device features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 14A at 25°C. The Rds On is specified at a maximum of 240mOhm when conducting 8.4A with a 10V gate-source voltage. With a maximum power dissipation of 150W (Tc), this MOSFET is suited for demanding applications. Key parameters include a gate charge (Qg) of 54nC at 10V and an input capacitance (Ciss) of 1060pF at 25V. The TO-220AB package facilitates through-hole mounting and operates within a temperature range of -55°C to 175°C. This component is frequently utilized in power conditioning, industrial motor control, and high-voltage switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs240mOhm @ 8.4A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1060 pF @ 25 V

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