IRF644NLPBF
MOSFET N-CH 250V 14A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF644NLPBF is an N-Channel Power MOSFET designed for demanding power applications. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 14A at 25°C (Tc), with a maximum continuous Power Dissipation of 150W (Tc). The Rds On is specified at a maximum of 240mOhm at 8.4A and 10V Vgs. Key parameters include Input Capacitance (Ciss) of 1060pF at 25V and Gate Charge (Qg) of 54nC at 10V. The device is housed in an I2PAK (TO-262-3 Long Leads, TO-262AA) package for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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