IRF644N
MOSFET N-CH 250V 14A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF644N is an N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 14A at 25°C. The device offers a low on-resistance (Rds On) of 240mOhm typical at 8.4A and 10V gate drive, with a maximum power dissipation of 150W at 25°C case temperature. Key parameters include a gate charge (Qg) of 54 nC maximum at 10V and input capacitance (Ciss) of 1060 pF maximum at 25V. It is packaged in a standard TO-220AB configuration. This MOSFET is suitable for use in power supply, motor control, and industrial automation applications. The operating temperature range is from -55°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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