IRF644L
MOSFET N-CH 250V 14A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF644L is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 14 A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 280 mOhm at 8.4 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 68 nC maximum at 10 V and Input Capacitance (Ciss) of 1300 pF maximum at 25 V. The IRF644L utilizes through-hole mounting in an I2PAK package (TO-262-3 Long Leads, I2PAK, TO-262AA) and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly found in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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