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IRF640STRL

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IRF640STRL

MOSFET N-CH 200V 18A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF640STRL is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 18A at 25°C (Tc), with a maximum power dissipation of 130W (Tc). The IRF640STRL offers a low on-resistance (Rds On) of 180mOhm maximum at 11A and 10V gate-source voltage (Vgs). Key electrical parameters include a gate charge (Qg) of 70 nC maximum at 10V Vgs and an input capacitance (Ciss) of 1300 pF maximum at 25V Vds. It is packaged in a TO-263-3 (D2PAK) surface mount package, supplied on tape and reel for automated assembly. Typical industries utilizing this device include industrial automation, power supplies, and automotive electronics. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V

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