IRF640S
MOSFET N-CH 200V 18A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF640S is an N-Channel Power MOSFET designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) capability of 18A at 25°C (Tc). The low on-resistance (Rds On) of 180mOhm is achieved at 11A and 10V Vgs, facilitating efficient power transfer. With a gate charge (Qg) of 70 nC at 10V and input capacitance (Ciss) of 1300 pF at 25V, the IRF640S offers robust switching characteristics. It supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. The device is housed in a TO-263 (D2PAK) surface mount package, enabling high-density board designs. Power dissipation is rated at 3.1W (Ta) and 130W (Tc). This MOSFET is suitable for use in power supply units, motor control, and general-purpose power switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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