IRF640LPBF
MOSFET N-CH 200V 18A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number IRF640LPBF, offers a 200V drain-to-source voltage (Vdss) and 18A continuous drain current at 25°C (Tc). This through-hole component, packaged in a TO-262-3 configuration, features a maximum on-resistance (Rds On) of 180mOhm at 11A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 70 nC at 10V and input capacitance (Ciss) of 1300 pF at 25V. The device supports a maximum power dissipation of 130W at 25°C (Tc) and 3.1W at 25°C (Ta). Operating temperature ranges from -55°C to 150°C (TJ) with a ±20V maximum gate-source voltage. This component is suitable for applications in power supply design, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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