IRF640L
MOSFET N-CH 200V 18A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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This Vishay Siliconix N-Channel Power MOSFET, part number IRF640L, offers a 200V drain-to-source breakdown voltage and a continuous drain current of 18A at 25°C (Tc). Featuring an Rds(on) of 180mOhm maximum at 11A and 10V Vgs, this device is designed for efficient power switching. The I2PAK (TO-262-3 Long Leads) package facilitates through-hole mounting. Key parameters include a gate charge (Qg) of 70 nC maximum at 10V and input capacitance (Ciss) of 1300 pF maximum at 25V. Power dissipation is rated at 130W (Tc) and 3.1W (Ta). Operating temperature range is -55°C to 150°C. This component finds application in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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