IRF634SPBF
MOSFET N-CH 250V 8.1A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF634SPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 250V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 8.1A at 25°C (Tc). With a low on-resistance (Rds(on)) of 450mOhm maximum at 5.1A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a gate charge (Qg) of 41 nC maximum at 10V Vgs and an input capacitance (Ciss) of 770 pF maximum at 25V Vds. Its robust thermal performance is evidenced by a maximum power dissipation of 74W at 25°C (Tc). Packaged in a TO-263 (D2PAK) surface-mount package, the IRF634SPBF is suitable for power switching, motor control, and power supply designs across industrial and automotive sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |