IRF634S
MOSFET N-CH 250V 8.1A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF634S is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 8.1A at 25°C (Tc). With a maximum on-resistance (Rds On) of 450mOhm at 5.1A and 10V Vgs, it provides low conduction losses. The MOSFET features a gate charge (Qg) of 41 nC at 10V and input capacitance (Ciss) of 770 pF at 25V, facilitating fast switching speeds. Its surface mount TO-263 (D2PAK) packaging ensures robust thermal performance with a maximum power dissipation of 74W (Tc) and 3.1W (Ta). Operating across a temperature range of -55°C to 150°C, the IRF634S is suitable for power supplies, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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