IRF634NPBF
MOSFET N-CH 250V 8A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF634NPBF is an N-Channel Power MOSFET designed for robust performance in demanding applications. This component features a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 435mOhm at 4.8A and 10V Vgs, it offers efficient power handling. The device supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include an input capacitance (Ciss) of 620pF (max) at 25V and a gate charge (Qg) of 34nC (max) at 10V gate drive. Power dissipation is rated at 88W (Tc) and 3.8W (Ta). The IRF634NPBF is housed in a through-hole TO-220AB package, suitable for power supply units, industrial motor control, and lighting applications. It operates across an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 435mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |