IRF634
MOSFET N-CH 250V 8.1A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRF634 is a high-performance power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 8.1A at 25°C, this component offers robust power handling capabilities with a maximum power dissipation of 74W (Tc). The N-Channel FET type, coupled with a low on-resistance of 450mOhm at 5.1A and 10V, ensures efficient operation. Key electrical parameters include a Gate Charge (Qg) of 41 nC at 10V and an Input Capacitance (Ciss) of 770 pF at 25V. This through-hole component is housed in a standard TO-220AB package, making it suitable for a wide range of industrial control, power supply, and automotive applications. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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