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IRF630S

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IRF630S

MOSFET N-CH 200V 9A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF630S is an N-channel power MOSFET designed for demanding applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc). The device boasts a low on-resistance (Rds On) of 400mOhm maximum at 5.4A and 10V Vgs. Fabricated using MOSFET technology, it offers a gate charge (Qg) of 43nC maximum at 10V Vgs and an input capacitance (Ciss) of 800pF maximum at 25V Vds. The IRF630S is available in a TO-263 (D2PAK) surface mount package, providing efficient thermal management with a maximum power dissipation of 74W (Tc). This component is suitable for use in power supply, motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 25 V

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