IRF630S
MOSFET N-CH 200V 9A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF630S is an N-channel power MOSFET designed for demanding applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc). The device boasts a low on-resistance (Rds On) of 400mOhm maximum at 5.4A and 10V Vgs. Fabricated using MOSFET technology, it offers a gate charge (Qg) of 43nC maximum at 10V Vgs and an input capacitance (Ciss) of 800pF maximum at 25V Vds. The IRF630S is available in a TO-263 (D2PAK) surface mount package, providing efficient thermal management with a maximum power dissipation of 74W (Tc). This component is suitable for use in power supply, motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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