IRF624SPBF
MOSFET N-CH 250V 4.4A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF624SPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 4.4A at 25°C (Tc). The device offers a maximum Rds(on) of 1.1 Ohm at 2.6A and 10V gate drive. Key electrical characteristics include input capacitance (Ciss) of 260 pF at 25V and gate charge (Qg) of 14 nC at 10V. The maximum gate-source voltage (Vgs) is ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA.
The IRF624SPBF is housed in a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management with a power dissipation of 50W at 25°C (Tc) and 3.1W at 25°C (Ta). Its operational temperature range is -55°C to 150°C (TJ). This MOSFET is widely utilized in power supply units, motor control systems, and industrial automation. The device is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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