IRF624PBF-BE3
MOSFET N-CH 250V 4.4A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel Power MOSFET, part number IRF624PBF-BE3, offers a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 4.4A at 25°C. This TO-220AB packaged device features a maximum power dissipation of 50W (Tc) and a low on-resistance of 1.1Ohm maximum at 2.6A, 10V. Key parameters include a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 260 pF at 25V. With a Vgs(th) of 4V at 250µA and a maximum Vgs rating of ±20V, it is suitable for applications requiring robust switching performance. The component operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |