IRF624PBF
MOSFET N-CH 250V 4.4A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF624PBF is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 250V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 4.4A at 25°C. The device offers a maximum on-resistance (Rds On) of 1.1 Ohm at 2.6A and 10V gate-source voltage. With a maximum power dissipation of 50W (Tc) and a gate charge (Qg) of 14 nC at 10V, the IRF624PBF is suitable for power supply, motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C and comes in a TO-220AB package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |