IRF624
MOSFET N-CH 250V 4.4A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF624 is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 4.4A at 25°C. The on-resistance (Rds On) is a maximum of 1.1 Ohms at 2.6A and 10V gate-source voltage. With a gate charge (Qg) of 14nC at 10V and input capacitance (Ciss) of 260pF, it offers optimized switching characteristics. The device dissipates up to 50W (Tc) and is packaged in a standard TO-220AB through-hole configuration. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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