IRF620S
MOSFET N-CH 200V 5.2A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF620S is an N-Channel MOSFET designed for power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 5.2A at 25°C (Tc). The Rds On is specified at a maximum of 800mOhm at 3.1A and 10V gate drive. Key parameters include 14nC maximum gate charge at 10V and 260pF maximum input capacitance at 25V. The device is packaged in a TO-263 (D2PAK) surface-mount package, offering a total power dissipation of 3W (Ta) or 50W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial, automotive, and consumer electronics sectors requiring efficient power control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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