IRF620
MOSFET N-CH 200V 5.2A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF620 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This TO-220AB packaged component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 5.2A at 25°C. The device boasts a low on-resistance (Rds On) of 800mOhm maximum at 3.1A and 10V gate drive. With a maximum power dissipation of 50W (Tc), it is suitable for power supply units, motor control, and lighting applications. Key electrical parameters include a gate charge (Qg) of 14nC maximum at 10V and an input capacitance (Ciss) of 260pF maximum at 25V. The operating temperature range is from -65°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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