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IRF620

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IRF620

MOSFET N-CH 200V 5.2A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF620 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This TO-220AB packaged component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 5.2A at 25°C. The device boasts a low on-resistance (Rds On) of 800mOhm maximum at 3.1A and 10V gate drive. With a maximum power dissipation of 50W (Tc), it is suitable for power supply units, motor control, and lighting applications. Key electrical parameters include a gate charge (Qg) of 14nC maximum at 10V and an input capacitance (Ciss) of 260pF maximum at 25V. The operating temperature range is from -65°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.2A (Tc)
Rds On (Max) @ Id, Vgs800mOhm @ 3.1A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 25 V

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