IRF614STRRPBF
MOSFET N-CH 250V 2.7A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel MOSFET, part number IRF614STRRPBF, is a TO-263 (D2PAK) surface-mount device designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 2.7A at 25°C (Tc). The Rds(On) is specified at a maximum of 2 Ohms at 1.6A and 10V gate drive. Power dissipation is rated at 3.1W (Ta) and 36W (Tc). Key electrical parameters include a Gate Charge (Qg) of 8.2 nC (max) at 10V and Input Capacitance (Ciss) of 140 pF (max) at 25V. The operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and lighting applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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