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IRF614STRR

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IRF614STRR

MOSFET N-CH 250V 2.7A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF614STRR is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 2.7A at 25°C (Tc). The Rds(On) is specified at a maximum of 2 Ohms at 1.6A and 10V Vgs. With a gate charge (Qg) of 8.2 nC at 10V and input capacitance (Ciss) of 140 pF at 25V, it offers efficient switching characteristics. The device is packaged in a TO-263 (D2PAK) surface-mount package, suitable for automated assembly. Power dissipation capabilities are 3.1W (Ta) and 36W (Tc). This MOSFET finds application in power supply units, motor control, and lighting control systems. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.7A (Tc)
Rds On (Max) @ Id, Vgs2Ohm @ 1.6A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V

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