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IRF614S

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IRF614S

MOSFET N-CH 250V 2.7A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF614S is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain current (Id) of 2.7A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2 Ohms at 1.6A and 10V gate drive, it offers efficient switching. The device supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include input capacitance (Ciss) of 140pF at 25V and gate charge (Qg) of 8.2nC at 10V. Power dissipation capabilities are 3.1W (Ta) and 36W (Tc). The IRF614S is housed in a TO-263 (D2PAK) surface-mount package, making it suitable for high-density circuit designs. This component is widely utilized in industrial power control and power supply applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.7A (Tc)
Rds On (Max) @ Id, Vgs2Ohm @ 1.6A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V

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