IRF614S
MOSFET N-CH 250V 2.7A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF614S is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain current (Id) of 2.7A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2 Ohms at 1.6A and 10V gate drive, it offers efficient switching. The device supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include input capacitance (Ciss) of 140pF at 25V and gate charge (Qg) of 8.2nC at 10V. Power dissipation capabilities are 3.1W (Ta) and 36W (Tc). The IRF614S is housed in a TO-263 (D2PAK) surface-mount package, making it suitable for high-density circuit designs. This component is widely utilized in industrial power control and power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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