IRF614PBF
MOSFET N-CH 250V 2.7A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF614PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 2.7A (Tc), this component is suitable for power supply designs, motor control, and industrial automation. The device offers a low on-resistance (Rds On) of 2 Ohm maximum at 1.6A, 10V, contributing to reduced conduction losses. Its TO-220AB through-hole package facilitates easy assembly onto printed circuit boards. Key electrical parameters include a Gate Charge (Qg) of 8.2 nC (Max) at 10V, and an Input Capacitance (Ciss) of 140 pF (Max) at 25V. The maximum power dissipation is rated at 36W (Tc), with an operating temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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