IRF610S
MOSFET N-CH 200V 3.3A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF610S is an N-Channel Power MOSFET featuring a 200V drain-to-source voltage (Vdss) and continuous drain current capability of 3.3A at 25°C (Tc). This device utilizes MOSFET technology and is housed in a TO-263 (D2PAK) surface-mount package, providing 36W of power dissipation at 25°C (Tc). Key electrical parameters include a maximum Rds(On) of 1.5 Ohm at 2A and 10V, with a gate charge (Qg) of 8.2 nC at 10V and input capacitance (Ciss) of 140 pF at 25V. The operating temperature range is -55°C to 150°C (TJ), and the maximum gate-source voltage is ±20V. This component is suitable for applications in power supply, motor control, and general-purpose switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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