IRF610L
MOSFET N-CH 200V 3.3A TO262Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF610L is an N-Channel Power MOSFET designed for applications requiring high voltage and moderate current handling. This component features a Drain-Source Breakdown Voltage (Vdss) of 200V and a continuous drain current (Id) capability of 3.3A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 1.5 Ohms at 2A and 10V Vgs, it offers efficient switching characteristics. Key parameters include a Gate Charge (Qg) of 8.2 nC at 10V and an input capacitance (Ciss) of 140 pF at 25V. The device supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation is rated at 3W (Ta) and 36W (Tc). The IRF610L is available in a TO-262-3 Long Leads package, suitable for through-hole mounting. Typical industries utilizing this component include industrial power supplies and general-purpose switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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