IRF540STRR
MOSFET N-CH 100V 28A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF540STRR is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 28A at 25°C (Tc). The Rds(On) is specified at a maximum of 77mOhm at 17A and 10V Vgs, with a typical Rds(On) driven by 10V. Key parameters include a gate charge (Qg) of 72 nC maximum at 10V and input capacitance (Ciss) of 1700 pF maximum at 25V Vds. Power dissipation is rated at 150W (Tc) and 3.7W (Ta). The TO-263-3, D2PAK (TO-263AB) package is suitable for surface mounting, operating within a temperature range of -55°C to 175°C (TJ). Applications include power switching and motor control in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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