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IRF540STRL

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IRF540STRL

MOSFET N-CH 100V 28A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF540STRL is an N-Channel Power MOSFET designed for high-performance switching applications. This component features a drain-source breakdown voltage of 100V and a continuous drain current capability of 28A at 25°C (Tc). The IRF540STRL exhibits a low on-resistance (Rds On) of 77mOhm maximum at 17A and 10V gate-source voltage, minimizing conduction losses. Its gate charge (Qg) is 72 nC maximum at 10V, facilitating efficient switching. The device is housed in a TO-263 (D2PAK) surface-mount package, suitable for automated assembly. With a maximum power dissipation of 150W (Tc), it is well-suited for demanding power management tasks in industries such as industrial automation, power supplies, and automotive electronics. The operating temperature range is from -55°C to 175°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs77mOhm @ 17A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 25 V

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