IRF540S
MOSFET N-CH 100V 28A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF540S is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 28A at 25°C case temperature. The on-resistance (Rds On) is specified at a maximum of 77mOhm at 17A and 10V gate drive. With a gate charge (Qg) of 72nC (max) at 10V and input capacitance (Ciss) of 1700pF (max) at 25V, this MOSFET offers robust performance. It is packaged in a TO-263 (D2PAK) surface-mount package and can dissipate up to 150W at 25°C case temperature. The operating temperature range is -55°C to 175°C (TJ). This device finds application in power supply units, motor control, and general-purpose power switching across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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