IRF530STRR
MOSFET N-CH 100V 14A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRF530STRR, offers a 100V drain-source voltage and a continuous drain current of 14A at 25°C (Tc). This N-Channel MOSFET features a low on-resistance of 160mOhm maximum at 8.4A and 10V Vgs. The device is housed in a TO-263-3, D2PAK surface mount package, suitable for automated assembly. With a gate charge of 26 nC at 10V and input capacitance of 670 pF at 25V, it is engineered for efficient switching applications. Maximum power dissipation is rated at 88W (Tc) and 3.7W (Ta). Operating temperature range is -55°C to 175°C. This component is utilized in industries such as industrial automation, power supplies, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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