IRF520STRL
MOSFET N-CH 100V 9.2A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix IRF520STRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 9.2A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 270mOhm at 5.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 16 nC (max) at 10V and input capacitance (Ciss) of 360 pF (max) at 25V. The MOSFET is housed in a TO-263-3, D2PAK surface-mount package, facilitating automated assembly. Power dissipation is rated at 3.7W (Ta) and 60W (Tc). This component is suitable for use in power supply, motor control, and general-purpose switching applications. The IRF520STRL is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
