IRF510STRL
MOSFET N-CH 100V 5.6A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF510STRL is an N-Channel power MOSFET designed for efficient switching applications. This component features a 100V drain-source breakdown voltage and a continuous drain current rating of 5.6A at 25°C case temperature. With a low Rds(on) of 540mOhm maximum at 3.4A and 10V Vgs, it minimizes conduction losses. The device is housed in a TO-263 (D2PAK) surface-mount package, facilitating high-density board designs. Key parameters include a gate charge of 8.3nC maximum at 10V Vgs and an input capacitance of 180pF maximum at 25V Vds. The IRF510STRL offers robust performance within an operating temperature range of -55°C to 175°C, suitable for use in industrial and automotive power management systems. Its power dissipation capabilities are rated at 43W at 25°C case temperature and 3.7W at 25°C ambient temperature.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
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