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IRF510S

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IRF510S

MOSFET N-CH 100V 5.6A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF510S is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 5.6A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 540mOhm at 3.4A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 8.3 nC maximum at 10V Vgs and input capacitance (Ciss) of 180 pF maximum at 25V Vds, it offers effective switching characteristics. The device supports a drive voltage up to 10V for optimal Rds(on) performance. Power dissipation is rated at 43W (Tc) and 3.7W (Ta). The IRF510S is housed in a TO-263-3, D2PAK surface mount package, suitable for high-density board designs. This MOSFET is commonly utilized in power supply units, motor control, and industrial automation systems. Operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Rds On (Max) @ Id, Vgs540mOhm @ 3.4A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 25 V

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