IRF510L
MOSFET N-CH 100V 5.6A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF510L is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 5.6A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 540mOhm at 3.4A and 10V, it offers efficient switching characteristics. The device has a gate charge (Qg) of 8.3 nC maximum at 10V and an input capacitance (Ciss) of 180 pF maximum at 25V. The IRF510L is packaged in a TO-262-3 (Long Leads, I2PAK, TO-262AA) through-hole configuration, suitable for various industrial and automotive power management systems. It operates across a wide temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
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