IRF510
MOSFET N-CH 100V 5.6A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF510 is an N-Channel Power MOSFET designed for general-purpose switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 5.6A at 25°C (Tc). The Rds(On) is specified at a maximum of 540mOhm at 3.4A and 10V Vgs. With a Gate Charge (Qg) of 8.3 nC (max) at 10V and an Input Capacitance (Ciss) of 180 pF (max) at 25V, this MOSFET is suitable for efficient switching. The power dissipation is rated at 43W (Tc). The IRF510 is housed in a TO-220AB package, facilitating through-hole mounting. This component finds application in areas such as power supplies, motor control, and general-purpose switching circuits across various industrial sectors. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
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