IRF3205ZSTRR
MOSFET N-CH 55V 75A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF3205ZSTRR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 55 V and a continuous drain current (Id) capability of 75 A at 25°C (Tc). The IRF3205ZSTRR offers a low on-resistance (Rds On) of 6.5 mOhm at 66 A and 10 V, ensuring minimal power loss during conduction. With a maximum power dissipation of 170 W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. The MOSFET is housed in a TO-263 (D2PAK) package for surface mounting and is supplied on tape and reel. Key electrical parameters include a Gate Charge (Qg) of 110 nC at 10 V and input capacitance (Ciss) of 3450 pF at 25 V. This component finds application in automotive, industrial power supplies, and power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 25 V |
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