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IRF3205ZSTRR

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IRF3205ZSTRR

MOSFET N-CH 55V 75A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF3205ZSTRR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 55 V and a continuous drain current (Id) capability of 75 A at 25°C (Tc). The IRF3205ZSTRR offers a low on-resistance (Rds On) of 6.5 mOhm at 66 A and 10 V, ensuring minimal power loss during conduction. With a maximum power dissipation of 170 W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. The MOSFET is housed in a TO-263 (D2PAK) package for surface mounting and is supplied on tape and reel. Key electrical parameters include a Gate Charge (Qg) of 110 nC at 10 V and input capacitance (Ciss) of 3450 pF at 25 V. This component finds application in automotive, industrial power supplies, and power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 66A, 10V
FET Feature-
Power Dissipation (Max)170W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3450 pF @ 25 V

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