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IRF3205ZSTRL

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IRF3205ZSTRL

MOSFET N-CH 55V 75A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF3205ZSTRL is an N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 75A at 25°C (Tc). With a low on-resistance (Rds On) of 6.5mOhm at 66A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 170W (Tc) and a gate charge (Qg) of 110 nC at 10V. Packaged in a TO-263 (D2PAK) surface-mount configuration and supplied on tape and reel, the IRF3205ZSTRL is suitable for use in industrial, automotive, and power supply applications. It operates within a junction temperature range of -55°C to 175°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 66A, 10V
FET Feature-
Power Dissipation (Max)170W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3450 pF @ 25 V

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