IRF2807ZSTRR
MOSFET N-CH 75V 75A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF2807ZSTRR is an N-Channel Power MOSFET designed for high-current applications. This component features a 75V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 75A at 25°C (Tc). The low on-resistance (Rds On) of 9.4mOhm at 53A, 10V ensures efficient power transfer with minimal conduction losses. With a maximum power dissipation of 170W (Tc), it is suitable for demanding thermal environments. The device is housed in a TO-263 (D2PAK) surface-mount package, facilitating automated assembly. Key parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 3270 pF at 25V, critical for switching speed optimization. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply switching, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 25 V |
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